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2N6547 参数 Datasheet PDF下载

2N6547图片预览
型号: 2N6547
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN SILICON POWER TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 464 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号2N6547的Datasheet PDF文件第2页  
2N6546
2N6547
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6546, 2N6547
types are NPN Silicon Power Transistors designed for
high voltage, high current, applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEV
Collector-Emitter Voltage
VCEX
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Emitter Current
IE
Peak Emitter Current
IEM
Continuous Base Current
IB
Peak Base Current
IBM
Power Dissipation
PD
Power Dissipation, TC=100°C
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
2N6546
650
350
300
2N6547
850
450
400
9.0
15
30
25
50
10
20
175
100
-65 to +200
1.0
UNITS
V
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
2N6546
SYMBOL
TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEV, VBE=1.5V
-
1.0
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
-
4.0
ICER
VCE=Rated VCEV, RBE=50Ω, TC=100°C
-
5.0
IEBO
VEB=9.0V
-
1.0
BVCEX
VCL=Rated VCEX, IC=8.0A, TC=100°C
350
-
BVCEX
VCL=Rated VCEO-100V, IC=15A, TC=100°C
200
-
BVCEO
IC=100mA
300
-
VCE(SAT) IC=10A, IB=2.0A
-
1.5
VCE(SAT) IC=10A, IB=2.0A, TC=100°C
-
2.5
VCE(SAT) IC=15A, IB=3.0A
-
5.0
VBE(SAT) IC=10A, IB=2.0A
-
1.6
VBE(SAT) IC=10A, IB=2.0A, TC=100°C
-
1.6
hFE
VCE=2.0V, IC=5.0A
12
60
hFE
VCE=2.0V, IC=10A
6.0
30
2N6547
MIN MAX
-
1.0
-
4.0
-
5.0
-
1.0
450
-
300
-
400
-
-
1.5
-
2.5
-
5.0
-
1.6
-
1.6
12
60
6.0
30
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
R2 (12-December 2011)