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BC857AW 参数 Datasheet PDF下载

BC857AW图片预览
型号: BC857AW
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装型PNP硅晶体管 [SURFACE MOUNT PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 2 页 / 402 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号BC857AW的Datasheet PDF文件第2页  
BC856W SERIES
BC857W SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856W and
BC857W Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini
TM
surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
VBE(ON)
Cib
Cob
fT
NF
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
BC857W
50
45
BC856W
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
dB
BC857CW
MIN
MAX
420
800
5.0
100
200
200
275
-65 to +150
455
MAX
15
4.0
100
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=30V
VCB=30V, TA=150°C
VEB=5.0V
IC=10μA (BC857W)
IC=10μA (BC856W)
IC=10mA (BC857W)
IC=10mA (BC856W)
IE=10μA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=100mA, IB=5mA
IC=2.0mA, VCE=5.0V
IC=10mA, VCE=5.0V
VEB=0.5V, IC=0, f=1.0MHz
VCB=10V, IE=0, f=1.0MHz
VCE=5.0V, IC=10mA, f=100MHz
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
otherwise noted)
MIN
50
80
45
65
5.0
0.30
0.65
0.95
0.75
0.82
12
5.0
0.60
100
10
BC856BW
BC857BW
MIN
MAX
220
475
hFE
VCE=5.0V, IC=2.0mA
BC856AW
BC857AW
MIN
MAX
125
250
R1 (20-November 2009)