BCV47
NPN
SILICON DARLINGTON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV47 type is
a Silicon NPN Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.
Marking Code is FG.
SOT-23 CASE
MAXIMUM RATINGS
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
-65 to +150
357
°C
°C/W
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
80
60
10
500
800
100
350
UNITS
V
V
V
mA
mA
mA
mW
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
IEBO
BVCEO
BVCBO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
VCB=30V
VBE=10V
IC=10mA
IC=10µA
IE=100nA
IC=100mA, IB = 0.1mA
IC=100mA, IB = 0.1mA
VCE=5.0V, IC = 1.0mA
VCE=5.0V, IC = 10mA
VCE=5.0V, IC = 100mA
VCE=5.0V, IC = 30mA, f=100MHz
60
80
10
TYP
MAX
100
100
UNITS
nA
nA
V
V
V
1.0
1.5
2,000
4,000
10,000
220
V
V
MHz
R0 ( 07-December 2001)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
