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BCW66G 参数 Datasheet PDF下载

BCW66G图片预览
型号: BCW66G
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装NPN硅晶体管 [SURFACE MOUNT NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 2 页 / 323 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号BCW66G的Datasheet PDF文件第2页  
BCW65 SERIES
BCW66 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW65 and
BCW66 Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ
JA
BCW65
60
32
5.0
800
1.0
100
200
350
-65 to +150
357
MAX
20
20
20
BCW66
75
45
UNITS
V
V
V
mA
A
mA
mA
mW
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
BCW65C
BCW66H
MIN MAX
80
180
250
630
100
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless
SYMBOL
TEST CONDITIONS
ICBO
VCB=Rated VCEO
ICBO
VCB= Rated VCEO, TA=150°C
IEBO
VEB=4.0V
BVCBO
IC=10µA (BCW65)
BVCBO
IC=10µA (BCW66)
BVCEO
IC=10mA (BCW65)
BVCEO
IC=10mA (BCW66)
BVEBO
IE=10µA
VCE(SAT)
IC=100mA, IB=10mA
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=100mA, IB=10mA
VBE(SAT)
IC=500mA, IB=50mA
fT
VCE=5.0V, IC=50mA, f=20MHz
Cc
VCB=10V, IE=0, f=1.0MHz
Ce
VEB=0.5V, IC=0, f=1.0MHz
otherwise noted)
MIN
TYP
60
75
32
45
5.0
0.3
0.7
1.25
2.0
170
6.0
60
BCW65B
BCW66G
MIN
MAX
50
110
160
400
60
hFE
hFE
hFE
hFE
VCE=10V, IC=100µA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
VCE=2.0V, IC=500mA
BCW65A
BCW66F
MIN
MAX
35
75
100
250
35
R2 (20-November 2009)