BCW67 SERIES
BCW68 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW67 and BCW68
Series types are PNP Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Conitinuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cc
Ce
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ
JA
BCW67
45
32
BCW68
60
45
UNITS
V
V
V
mA
A
mA
mA
mW
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
BCW67C
BCW68H
MIN MAX
80
180
250
630
100
5.0
800
1.0
100
200
350
-65 to +150
357
MAX
20
20
20
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=Rated VCEO
VCB= Rated VCEO, TA=150°C
VEB=4.0V
IC=10µA (BCW67)
IC=10µA (BCW68)
IC=10mA (BCW67)
IC=10mA (BCW68)
IE=10µA
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=100mA, IB=10mA
IC=500mA, IB=50mA
VCE=5.0V, IC=50mA, f=20MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
otherwise noted)
MIN
TYP
45
60
32
45
5.0
0.3
0.7
1.25
2.0
200
6.0
60
BCW67B
BCW68G
MIN
MAX
50
120
160
400
60
hFE
hFE
hFE
hFE
VCE=10V, IC=100µA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
VCE=2.0V, IC=500mA
BCW67A
BCW68F
MIN MAX
35
75
100
250
35
R2 (20-November 2009)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
