BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51, BCX52,
and BCX53 types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
current general purpose amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-89 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ
JA
BCX51
45
45
BCX52
60
60
5.0
1.0
1.5
100
200
1.3
-65 to +150
96
BCX53
100
80
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
ICBO
VCB=30V, TA=125°C
IEBO
VEB=5.0V
BVCBO
IC=100µA (BCX51)
45
BVCBO
IC=100µA (BCX52)
60
BVCBO
IC=100µA (BCX53)
100
BVCEO
IC=10mA (BCX51)
45
BVCEO
IC=10mA (BCX52)
60
BVCEO
IC=10mA (BCX53)
80
VCE(SAT)
IC=500mA, IB=50mA
VBE(ON)
VCE=2.0V, IC=500mA
hFE
VCE=2.0V, IC=5.0mA
40
hFE
VCE=2.0V, IC=150mA
63
hFE
VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10)
63
hFE
VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16)
100
hFE
VCE=2.0V, IC=500mA
25
fT
VCE=5.0V, IC=10mA, f=100MHz
TYP
MAX
100
10
100
0.5
1.0
250
160
250
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
MHz
R5 (20-November 2009)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
