BD439 BD441
BD440 BD442
NPN
PNP
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD439, BD440
series types are Complementary Silicon Power
Transistors, manufactured by the epitaxial base process,
designed for medium power, low speed switching
applications.
MARKING: FULL PART NUMBER
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-126 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (t≤10ms)
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TC=25°C)
SYMBOL
TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICES
IEBO
BVCEO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
fT
VCE=Rated VCEO
VEB=5.0V
IC=100mA (BD439, BD440)
IC=100mA (BD441, BD442)
IC=2.0A, IB=200mA
VCE=1.0V, IC=2.0A
VCE=5.0V,
VCE=5.0V,
IC=10mA (BD439, BD440)
IC=10mA (BD441, BD442)
20
15
40
25
15
3.0
MHz
60
80
0.8
1.5
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JA
Θ
JC
BD439
BD440
60
60
60
5.0
4.0
7.0
1.0
36
-65 to +150
100
3.5
BD441
BD442
80
80
80
UNITS
V
V
V
V
A
A
A
W
°C
°C/W
°C/W
MIN
MAX
100
100
1.0
UNITS
μA
μA
mA
V
V
V
V
VCE=1.0V, IC=500mA
VCE=1.0V, IC=2.0A (BD439, BD440)
VCE=1.0V, IC=2.0A (BD441, BD442)
VCE=1.0V, IC=250mA
R1 (2-February 2009)