欢迎访问ic37.com |
会员登录 免费注册
发布采购

BD439 参数 Datasheet PDF下载

BD439图片预览
型号: BD439
PDF下载: 下载PDF文件 查看货源
内容描述: 互补硅功率晶体管 [COMPLEMENTARY SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 515 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号BD439的Datasheet PDF文件第2页  
BD439 BD441
BD440 BD442
NPN
PNP
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD439, BD440
series types are Complementary Silicon Power
Transistors, manufactured by the epitaxial base process,
designed for medium power, low speed switching
applications.
MARKING: FULL PART NUMBER
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-126 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (t≤10ms)
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TC=25°C)
SYMBOL
TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICES
IEBO
BVCEO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
fT
VCE=Rated VCEO
VEB=5.0V
IC=100mA (BD439, BD440)
IC=100mA (BD441, BD442)
IC=2.0A, IB=200mA
VCE=1.0V, IC=2.0A
VCE=5.0V,
VCE=5.0V,
IC=10mA (BD439, BD440)
IC=10mA (BD441, BD442)
20
15
40
25
15
3.0
MHz
60
80
0.8
1.5
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JA
Θ
JC
BD439
BD440
60
60
60
5.0
4.0
7.0
1.0
36
-65 to +150
100
3.5
BD441
BD442
80
80
80
UNITS
V
V
V
V
A
A
A
W
°C
°C/W
°C/W
MIN
MAX
100
100
1.0
UNITS
μA
μA
mA
V
V
V
V
VCE=1.0V, IC=500mA
VCE=1.0V, IC=2.0A (BD439, BD440)
VCE=1.0V, IC=2.0A (BD441, BD442)
VCE=1.0V, IC=250mA
R1 (2-February 2009)