BU806
BU807
NPN SILICON
DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BU806 and
BU807 types are NPN Silicon Darlington Transistors
designed for high voltage, high current, fast switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
BU806
400
400
200
6.0
8.0
15
2.0
60
-65 to +150
70
2.08
TYP
MAX
100
100
100
100
3.5
200
150
1.5
2.4
2.0
0.35
0.4
1.0
BU807
330
330
150
UNITS
V
V
V
V
A
A
A
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
μA
mA
V
V
V
V
V
μs
μs
Θ
JA
Θ
JC
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
VCE=400V (BU806)
ICES
VCE=330V (BU807)
ICEV
ICEV
IEBO
BVCEO
BVCEO
VCE(SAT)
VBE(SAT)
VF
ton
toff
VCE=400V, VEB=6.0V (BU806)
VCE=330V, VEB=6.0V (BU807)
VEB=6.0V
IC=100mA (BU806)
IC=100mA (BU807)
IC=5.0A, IB=50mA
IC=5.0A, IB=50mA
IF=4.0A
VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA
VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA
R0 (4-August 2011)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
