C106B
C106D
C106M
4.0A SENSITIVE GATE
SILICON CONTROLLED RECTIFIER
200 THRU 600 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106B
Series are 4.0A, PNPN sensitive gate triggering
silicon controlled rectifiers with voltages ranging
from 200V to 600V. These devices are designed
for applications such as temperature, light and
speed control, remote warning and triggering
applications.
MARKING CODE: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak Non-Repetitive Surge Current (TJ=110°C)
I
2
t Value for Fusing (t=8.3ms)
Peak Gate Power (TC=80°C)
Average Gate Power (TC=80°C)
Peak Forward Gate Current (TC=80°C)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
PGM
PG(AV)
IGFM
Tstg
TJ
Θ
JC
Θ
JA
C106B
200
C106D
400
4.0
20
1.65
0.5
0.1
0.2
C106M
600
UNITS
V
A
A
A
2
s
W
W
A
°C
°C
°C/W
°C/W
-40 to +150
-40 to +110
3.0
75
ELECTRICAL CHARACTERISTICS:
(TJ=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM,
IDRM,
VTM
IGT
IGT
VGT
VGT
IH
IH
IH
IL
IL
dv/dt
IRRM
IRRM
Rated VDRM,
Rated VDRM,
VRRM, RGK=1KΩ
VRRM, RGK=1KΩ, TJ=110°C
TYP
MAX
10
100
2.2
200
500
UNITS
µA
µA
V
µA
µA
V
V
mA
mA
mA
mA
mA
V/µs
IFM=4.0A
VAK=6.0V, RL=100Ω
VAK=6.0V, RL=100Ω, TJ= -40°C
VAK=6.0V, RL=100Ω
VAK=6.0V, RL=100Ω, TJ= -40°C
VD=12V
VD=12V, TJ= -40°C
VD=12V, TJ=110°C
VD=12V
VD=12V, TJ= -40°C
VD= Rated VDRM, RGK=1KΩ, TJ=110°C
8.0
0.4
0.5
0.8
1.0
3.0
6.0
2.0
5.0
7.0
R0 (27-April 2004)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
