CMPD2003
CMPD2004
CMPD2004S
HIGH VOLTAGE
SWITCHING DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR
CMPD2003, CMPD2004, CMPD2004S types
are silicon switching diodes manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
CMPD2004
CMPD2004S
SINGLE
SINGLE
DUAL, IN SERIES
MARKING CODE: A82
MARKING CODE: D53
MARKING CODE: DB6
MAXIMUM RATINGS
(TA=25oC)
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Θ
JA
CMPD2003
200
250
200
250
625
4000
1000
350
CMPD2004
CMPD2004S
240
300
200
225
625
4000
1000
UNITS
V
V
mA
mA
mA
mA
mA
mW
oC
oC/W
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1
µs
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
-65 to +150
357
ELECTRICAL CHARACTERISTICS
(TA=25oC unless otherwise noted)
CMPD2004
CMPD2003
CMPD2004S
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
BVR
IR=100
µA
250
300
IR
VR=200V
100
-
IR
VR=200V, TA=150oC
100
-
IR
VR=240V
-
100
IR
VR=240V, TA=150oC
-
100
VF
IF=100mA
1.0
1.0
UNIT
V
nA
µA
nA
µA
V
132
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
