CZT2000
NPN SILICON
EXTREMELY HIGH VOLTAGE
DARLINGTON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CZT2000
type is an NPN Epitaxial Planar Silicon
Darlington Transistor manufactured in an
epoxy molded surface mount package,
designed for applications requiring extremely
high voltages and high gain capability.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ,Tstg
Θ
JA
UNITS
V
V
V
mA
W
o
C
o
C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
200
200
10
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCES
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
TEST CONDITIONS
VCB=180V
VBE=10V
IC=1.0mA
IC=20mA, IB=25µA
IC=80mA, IB=40µA
IC=160mA, IB=100µA
VCE=5.0V, IC=160mA
VCE=5.0V, IC=100µA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=160mA
MIN
MAX
500
100
0.9
1.1
1.2
2.0
3,000
3,000
3,000
UNITS
nA
nA
V
V
V
V
V
200
298
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
