欢迎访问ic37.com |
会员登录 免费注册
发布采购

CZT5551 参数 Datasheet PDF下载

CZT5551图片预览
型号: CZT5551
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管功率双极晶体管光电二极管放大器
文件页数/大小: 2 页 / 96 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号CZT5551的Datasheet PDF文件第2页  
CZT5551
NPN SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CZT5551
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
voltage amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25
o
C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ
JA
180
160
6.0
600
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
o
C
o
C/W
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=120V
VCB=120V, TA=100
o
C
VEB=4.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
MIN
MAX
50
50
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
180
160
6.0
0.15
0.20
1.00
1.00
80
80
30
250
316