MPSA18
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA18 is a small
signal, low noise NPN silicon transistor designed for
general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
45
45
6.5
200
625
-65 to +150
200
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
BVCBO
IC=100μA
45
BVCEO
IC=10mA
45
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
Cib
NF
IE=10μA
IC=10mA,
IC=50mA,
IB=0.5mA
IB=5.0mA
IC=1.0mA
IC=10μA
400
500
500
500
100
6.5
MAX
50
UNITS
nA
V
V
V
0.2
0.3
0.7
V
V
V
VCE=5.0V,
VCE=5.0V,
VCE=5.0V, IC=100μA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=1.0mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=100μA, RS=10kΩ,
f=1.0kHz
1500
MHz
3.0
6.5
1.5
pF
pF
dB
R0 (3-February 2012)