N
EW
P6SMB6.8A
THRU
P6SMB200A
v
Central
DESCRIPTION
TM
Semiconductor Corp.
UNI-DIRECTIONAL
GLASS PASSIVATED JUNCTION
TRANSIENT VOLTAGE SUPPRESSOR
600 WATTS, 6.8 THRU 200 VOLTS
The CENTRAL SEMICONDUCTOR P6SMB6.8A
Series types are Surface Mount Uni-Directional
Glass Passivated Junction Transient Voltage
Suppressors designed to protect voltage sensitive
components from high voltage transients.
THIS
DEVICE IS MANUFACTURED WITH A GLASS
PASSIVATED CHIP FOR OPTIMUM
RELIABILITY.
Note: For Bi-directional devices, please refer to
the P6SMB6.8CA Series data sheet.
SMB CASE
e y
i db
pcf
Sei
BREAKDOWN
VOLTAGE
MAXIMUM RATINGS
(TA=25°C )
Peak Power Dissipation
Peak Forward Surge Current (JEDEC Method)
Operating and Storage
Junction Temperature
ELECTRICAL CHARACTERISTICS
(TA=25°C )
BREAKDOWN VOLTAGE
WORKING
PEAK
TYPE NO.
VBR
@ IT
SYMBOL
PPM
IFSM
TJ,Tstg
600
100
-65 to +150
UNITS
W
A
°C
MAXIMUM
REVERSE
LEAKAGE
@R RWM
I V
mA
MAXIMUM
REVERSE
SURGE
I
CURRENT
RSM
MAXIMUM
REVERSE
VOLTAGE
VRSM
@ IRSM
MAXIMUM
TEMP.
COEFFICIENT
of VBR
MARKING
CODE
REVERSE
V
VOLTAGE
RWM
VOLTS
MIN
P6SMB6.8A
P6SMB7.5A
P6SMB8.2A
P6SMB9.1A
P6SMB10A
P6SMB11A
P6SMB12A
P6SMB13A
P6SMB15A
P6SMB16A
P6SMB18A
P6SMB20A
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
NOM
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
MAX
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
mA
10
10
10
1
1
1
1
1
1
1
1
1
VOLTS
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
A
57
53
50
45
41
38
36
33
28
27
24
22
VOLTS
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
%/°C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
C6V8A
C7V5A
C8V2A
C9V1A
C10A
C11A
C12A
C13A
C15A
C16A
C18A
C20A
1000
500
200
50
10
5
5
5
5
5
5
5
414
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
