PN2906
PN2907
PN2906A
PN2907A
w w w. c e n t r a l s e m i . c o m
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN2906, PN2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
PN2906
PN2907
60
40
5.0
600
625
-65 to +150
200
PN2906A
PN2907A
60
60
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
PN2906
PN2907
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
-
20
ICEV
VCE=30V, VEB=0.5V
-
50
BVCBO
IC=10μA
60
-
BVCEO
IC=10mA
40
-
BVEBO
IE=10μA
5.0
-
VCE(SAT)
IC=150mA, IB=15mA
-
0.4
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cob
Cib
ton
toff
IC=500mA,
IC=150mA,
IC=500mA,
VCE=20V,
VCB=10V,
IB=50mA
IB=15mA
IB=50mA
-
-
-
200
-
-
-
-
1.6
1.3
2.6
-
8.0
30
45
100
PN2906A
PN2907A
MIN
MAX
-
10
-
50
60
60
5.0
-
-
-
-
200
-
-
-
-
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
45
100
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
IC=50mA, f=200MHz
IE=0, f=1.0MHz
VEB=2.0V, IC=0, f=1.0MHz
VCC=30V, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
R2 (30-January 2012)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
