CTM8B54E/55E/56E/57E
EPROM-Based 8-Bit CMOS Microcontroller
6.2 ELECTRICAL CHARACTERISTICS of CTM8B55E/57E
Parameter
Sym
VIH
Min.
Typ.
2.2
4.2
1.1
1.0
Max.
Units
V
Conditions
I/O ports, Vdd=5V
Input High Voltage
MCLR, Vdd=5V
I/O ports, Vdd=5V
MCLR, Vdd=5V
V
V
VIL
Input Low Volatge
Output Voltage
Sleep Current
V
VOh
VOL
IPD
3.8
V
I/O Ports, Vdd=4.5V, Ioh=-5.4mA,
Iol=8.7mA in RC mode
0.6
V
WDT Enable, Vdd=3.0V
WDT Disable, Vdd=3.0V
3.0
<1
uA
uA
IPD
HFXTAL: 24MHz, WDT Disable
Vdd=6.4V
8.87
5.84
4.09
1.88
mA
mA
mA
mA
Vdd=5.0V
Vdd=4.0V
Vdd=3.0v
IDD
LFXTAL: 32kHz, WDT Disable
Vdd=6.4V
2.83
1.96
1.42
675
279
116
mA
mA
mA
uA
Vdd=5.0V
Vdd=4.0V
Vdd=3.0V
Vdd=2.4V
Vdd=2.1V **
IDD
uA
uA
Operating Current
XTAL: 12MHz, WDT Disable
Vdd=6.4V
6.70
4.39
3.12
1.76
908
mA
mA
mA
mA
uA
Vdd=5.0V
Vdd=4.0V
Vdd=3.0V
Vdd=2.4V
IDD
mA XTAL: 4MHz, WDT Disable
Vdd=6.4V
Vdd=5.0V
Vdd=4.0V
Vdd=3.0V
Vdd=2.1V **
3.11
2.22
1.17
578
377
mA
mA
mA
uA
uA
* All specs and applications shown above subject to change without prior notice.
1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C
Tel:886-3-3529445
Fax:886-3-3521052
Email: server@ceramate.com.tw
Http: www.ceramate.com.tw
Rev 1.1 Dec 26,2001
Page 14 of 23
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