Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
b
CEP05N65/CEB05N65
CEF05N65
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2A
2
2
Min
650
25
100
-100
4
2.4
Typ
Max
Units
V
µA
4
nA
nA
V
Ω
Gate Threshold Voltage
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
DS
= 40V, I
D
= 2A
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
4
590
85
20
17
16
47
17.5
13
2
5
4.5
34
32
94
35
17
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
V
DD
= 300V, I
D
= 4.5A,
V
GS
= 10V, R
GEN
= 25Ω
V
DS
= 480V, I
D
= 4.5A,
V
GS
= 10V
Drain-Source Diode Characteristics and Maximun Ratings
V
GS
= 0V, I
S
= 2A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, I
AS
= 1.3A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C
2
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