N-Channel Enhancement Mode Field Effect Transistor
FEATURES
120V, 10A, R
DS(ON)
= 120mΩ @V
GS
= 5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
CEP1012L/CEB1012L
D
D
G
G
D
S
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
120
Units
V
V
A
A
W
W/ C
C
±
20
10
40
100
0.8
-65 to 150
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
1.25
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Jan
http://www.cetsemi.com