CEP21A3/CEB21A3
Nov. 2002
4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 20A , R
DS(ON)
=45m
Ω
@V
GS
=10V.
R
DS(ON)
=70m
Ω
@V
GS
=4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 & TO-263 package.
D
4
D
G
G
S
G
D
S
S
CEP SERIES
TO-220
CEB SERIES
TO-263(DD-PAK)
ABSOLUTE MAXIMUM RATINGS (T
C
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
@Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
30
20
20
60
20
43
0.29
-65 to 175
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
4-167
3.5
62.5
C/W
C/W
CET [ CHINO-EXCEL TECHNOLOGY ]
