CEP35P03/CEB35P03
25
-V
GS
=10,8,6,5V
20
50
25 C
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
40
15
-V
GS
=4V
10
30
5
T
J
=125 C
-55 C
20
5
-V
GS
=3V
10
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1800
1500
Ciss
1200
900
600
300
0
0
5
10
15
20
25
Coss
Crss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
I
D
=-20A
V
GS
=-10V
C, Capacitance (pF)
-50
0
50
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
-I
S
, Source-drain current (A)
V
GS
=0V
2
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=-250µA
10
10
1
10
-25
0
25
50
75
100
125
150
0
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
-V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5 - 69
CET [ CHINO-EXCEL TECHNOLOGY ]
