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CED3301 参数 Datasheet PDF下载

CED3301图片预览
型号: CED3301
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 421 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CED3301/CEU3301
-V
GS
, Gate to Source Voltage (V)
10 V =-15V
DS
I
D
=-5.3A
10
2
R
DS(ON)
Limit
100µs
1ms
10ms
DC
-I
D
, Drain Current (A)
8
6
4
2
0
10
1
10
0
0
5
10
15
20
10
-1
T
C
=25 C
T
J
=150 C
Single Pulse
-1
6
10
0
10
10
1
10
2
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
V
DD
t
on
V
IN
V
GS
R
GEN
G
R
L
D
V
OUT
t
d(on)
V
OUT
-V
DS
, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
t
off
t
r
90%
t
d(off)
90%
10%
t
f
10%
INVERTED
90%
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
1
t
2
10
-2
1. R
θJC
(t)=r (t) * R
θJC
2. R
θJC
=See Datasheet
3. T
JM-
T
C
= P* R
θJC
(t)
4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4