CEP01N6/CEB01N6
CEI01N6/CEF01N6
1.5
V
GS
=10,9,8V
2.5
25 C
I
D
, Drain Current (A)
V
GS
=6V
0.9
I
D
, Drain Current (A)
1.2
2.0
1.5
0.6
1.0
0.3
0.5
T
J
=125 C
0.0
-55 C
4
5
6
7
V
GS
=5V
0.0
0
5
10
15
20
25
1
2
3
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
240
200
160
120
80
Coss
40
0
0
5
10
15
20
25
Crss
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Ciss
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
I
D
=0.4A
V
GS
=10V
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
GS
=0V
0
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=250µA
I
S
, Source-drain current (A)
25
50
75
100
125
150
10
10
-1
10
-25
0
-2
0.2
0.6
1.0
1.4
1.8
2.2
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
