CEF04N6
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
OSS
C
RSS
V
SD
V
GS
= 0V, Is =2.5A
Symbol
Condition
Min Typ Max Unit
730
85
20
1.6
P
F
P
F
P
F
6
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
DRAIN-SOURCE DIODE CHARACTERISTICS
a
V
Notes
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
6
V
GS
=10,9,8,7V
5
10
I
D
, Drain Current(A)
4
3
2
1
0
0
2
4
6
8
10
12
V
GS
=6V
I
D
, Drain Current (A)
150 C
1
V
GS
=5V
-55 C
1.V
DS
=40V
2.Pulse Test
0.1
2
25 C
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6-124
CET [ CHINO-EXCEL TECHNOLOGY ]
