CEPF634/CEBF634
CEIF634/CEFF634
12
10
8
6
4
2
0
V
GS
=10,9,8,7V
10
1
I
D
, Drain Current (A)
V
GS
=6V
I
D
, Drain Current (A)
10
0
T
J
=150 C
-55 C
V
GS
=5V
V
GS
=4V
0
1
2
3
4
5
6
10
-1
25 C
2
4
6
1.V
DS
=40V
2.Pulse Test
8
10
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
600
400
200
0
Coss
Crss
0
10
20
30
40
50
Ciss
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=5.1A
V
GS
=10V
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
GS
=0V
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
S
, Source-drain current (A)
I
D
=250µA
10
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
