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CEG8205 参数 Datasheet PDF下载

CEG8205图片预览
型号: CEG8205
PDF下载: 下载PDF文件 查看货源
内容描述: CET , MOSFET , 20V , 4.5A , TSSOP - 8双N沟道增强型场效应晶体管 [CET,MOSFET,20V,4.5A,TSSOP-8 Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 123 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEG8205
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 4.5A, R
DS(ON)
= 30mΩ @V
GS
= 4.5V.
R
DS(ON)
= 40mΩ @V
GS
= 2.5V.
Super High dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G
2
S
2
S
2
D
D
S
1
S
1
G
1
1
2
3
4
8 D
7 S
2
6 S
2
5 G
2
G
1
S
1
S
1
D
TSSOP-8
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
20
Units
V
V
A
A
W
C
±
10
4.5
25
1.0
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
125
Units
C/W
2002.December
8 - 14
http://www.cetsemi.com