Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.5A, R
DS(ON)
= 22mΩ @V
GS
= 4.5V.
R
DS(ON)
= 32mΩ @V
GS
= 2.5V.
Super High dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
ESD Protected: HBM 2000 V
G
2
S
2
S
2
D
G
1
S
1
S
1
D
CEG8208
D
D
G
1
*1K
G
2
*1K
S
1
*Typical value by design
S
2
D
1
8
7
6
5
D
S
2
S
2
G
2
S
1
2
S
1
3
G
1
4
TSSOP-8
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
20
Units
V
V
A
A
W
C
±
12
6.5
25
1.5
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
83
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2006.Aug
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