CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , R
DS(ON)
=30m
Ω
@V
GS
=4.5V.
R
DS(ON)
=40m
Ω
@V
GS
=2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
TSSOP-8 for Surface Mount Package.
G
2
S
2
S
2
D
2
D
1
1
S
1
2
S
1
3
G
1
4
8
D
2
7
S
2
6
S
2
5
G
2
G
1
S
1
S
1
D
1
9
TSSOP-8
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
b
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
-55 to 150
Limit
20
8
4.5
25
1.7
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
125
C/W
9-17
CET [ CHINO-EXCEL TECHNOLOGY ]
