N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , R
DS(ON)
= 26mΩ @V
GS
= 4.5V.
R
DS(ON)
= 35mΩ @V
GS
= 2.5V.
High dense cell design for extremely low R
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
5
4
G
1
(6)
CEH2288
D
1
(2)
D
2
(5)
6
G
2
(4)
1
TSOP-6
2
3
S
1
(1)
S
2
(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
20
Units
V
V
A
A
W
C
±
12
5.2
20
1.14
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
110
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2007.MARCH
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
