P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -4.8A, R
DS(ON)
= 55mΩ @V
GS
= -4.5V.
R
DS(ON)
= 62mΩ @V
GS
= -2.5V.
High dense cell design for extremely low R
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
6
5
4
G(3)
1
TSOP-6
2
3
CEH2321
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
-20
Units
V
V
A
A
W
C
±
12
-4.8
-19.2
2.0
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
Details are subject to change without notice
1
Rev 3. 2010.Sep
http://www.cetsemi.com