CEP10N4/CEB10N4
CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP10N4
CEB10N4
CEI10N4
CEF10N4
V
DSS
450V
450V
450V
450V
R
DS(ON)
0.7Ω
0.7Ω
0.7Ω
0.7Ω
I
D
10A
10A
10A
10A
e
@V
GS
10V
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
V
DS
V
GS
I
D
I
DM
f
P
D
E
AS
I
AS
T
J
,T
stg
10
40
125
1.0
450
10
450
TO-220F
Units
V
V
±
30
10
45
0.36
450
10
-55 to 150
e
A
A
W
W/ C
mJ
A
C
40
e
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
1.0
62.5
Limit
2.8
65
Units
C/W
C/W
2002.September
4 - 50
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