CEPF634/CEBF634
CEIF634/CEFF634
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEPF634
CEBF634
CEIF634
CEFF634
V
DSS
250V
250V
250V
250V
R
DS(ON)
0.45Ω
0.45Ω
0.45Ω
0.45Ω
I
D
8.1A
8.1A
8.1A
8.1A
d
@V
GS
10V
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
V
DS
V
GS
I
D
I
DM
e
P
D
T
J
,T
stg
8.1
32
74
0.59
250
TO-220F
Units
V
V
±
30
8.1
38
0.3
-55 to 150
d
A
A
W
W/ C
C
32
d
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
1.7
62.5
Limit
3.3
65
Units
C/W
C/W
2006.July
1
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