N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 0.3A, R
DS(ON)
= 15
Ω
@V
GS
= 10V.
High dense cell design for extremely low R
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N65A
D
G
G
D
S
G
D
TO-92(Ammopack)
S
TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
650
Units
V
V
A
A
W
C
±
30
0.3
1.2
3.1
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Lead
b
Symbol
R
θJL
Limit
40
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.Feb.
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
