欢迎访问ic37.com |
会员登录 免费注册
发布采购

CEK01N6G 参数 Datasheet PDF下载

CEK01N6G图片预览
型号: CEK01N6G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 400 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEK01N6G的Datasheet PDF文件第2页浏览型号CEK01N6G的Datasheet PDF文件第3页浏览型号CEK01N6G的Datasheet PDF文件第4页  
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 1A, R
DS(ON)
= 9.3
@V
GS
= 10V.
High dense cell design for extremely low R
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N6G
D
G
G
D
G
S
D
TO-92(Ammopack)
S
TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
b
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
a
Limit
600
Units
V
V
A
A
W
C
±
30
0.4
1.6
3.1
-55 to 150
I
DM
P
D
T
J
,T
stg
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Lead
Symbol
R
θJL
Limit
40
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2009.Nov.
http://www.cetsemi.com