CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V ,7A , R
DS(ON)
=30m
Ω
@V
GS
=10V.
R
DS(ON)
=42m
Ω
@V
GS
=4.5V.
-20V , -4.3A , R
DS(ON)
=90m
Ω
@V
GS
=-4.5V.
R
DS(ON)
=120m
Ω
@V
GS
=-2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
SO-8
1
1
2
3
S
2
4
D
1
8
D
1
7
D
2
6
D
2
5
S
1
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @T
J
=125 C
b
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
a
a
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
N-Channel P-Channel
30
20
7
30
2.3
2.0
-55 to 150
-20
8
4.3
17
-4.3
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
62.5
C/W
5-148
CET [ CHINO-EXCEL TECHNOLOGY ]
