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CEM2082 参数 Datasheet PDF下载

CEM2082图片预览
型号: CEM2082
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 107 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEM2082
V
GS
, Gate to Source Voltage (V)
10
V
DS
=15V
I
D
=10A
10
2
R
DS(ON)
Limit
1ms
1
I
D
, Drain Current (A)
8
10
10ms
100ms
1s
DC
6
10
0
4
2
10
-1
0
0
15
30
45
60
10
-2
T
A
=25 C
T
J
=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
V
DS
, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
V
DD
t
on
V
IN
D
V
GS
R
GEN
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective
Transient Thermal Impedance
D=0.5
0.2
10
-1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Single Pulse
1. R
θJA
(t)=r (t) * R
θJA
2. R
θJA
=See Datasheet
3. T
JM-
T
A
= P* R
θJA
(t)
4. Duty Cycle, D=t1/t2
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4