Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM2939
5
FEATURES
20V, 6.5A, R
DS(ON)
= 30mΩ @V
GS
= 4.5V.
R
DS(ON)
= 43mΩ @V
GS
= 2.5V.
-20V, -4.8A, R
DS(ON)
= 55mΩ @V
GS
= -4.5V.
R
DS(ON)
= 90mΩ @V
GS
= -2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D
1
8
D
1
7
D
2
6
D
2
5
SO-8
1
1
S
1
2
G
1
3
S
2
4
G
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
N-Channel
20
P-Channel
-20
Units
V
V
A
A
W
C
±
12
6.5
20
2.0
-55 to 150
±
12
-4.8
-20
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
Specification and data are subject to change without notice .
1
Rev 3. 2007.Feb
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
