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CEM3258 参数 Datasheet PDF下载

CEM3258图片预览
型号: CEM3258
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 302 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEM3258的Datasheet PDF文件第2页浏览型号CEM3258的Datasheet PDF文件第3页浏览型号CEM3258的Datasheet PDF文件第4页  
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7A, R
DS(ON)
= 28mΩ @V
GS
= 10V.
R
DS(ON)
= 40mΩ @V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D
1
8
D
1
7
CEM3258
5
D
2
6
D
2
5
SO-8
1
1
S
1
2
G
1
3
S
2
4
G
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
30
Units
V
V
A
A
W
C
±
20
7
28
2.0
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2005.Dec
http://www.cetsemi.com