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CEM8207(ESD) 参数 Datasheet PDF下载

CEM8207(ESD)图片预览
型号: CEM8207(ESD)
PDF下载: 下载PDF文件 查看货源
内容描述: 20V N沟道MOS\n [20V N Channel MOS ]
分类和应用:
文件页数/大小: 5 页 / 57 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEM8207
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
5
FEATURES
20V , 6A , R
DS(ON)
=20m
@V
GS
=4.5V.
R
DS(ON)
=30m
@V
GS
=2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
1
2
3
S
2
4
D
1
8
D
1
7
D
2
6
D
2
5
SO-8
1
S
1
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
20
12
6
24
6
2
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
62.5
C/W
5-78