CEP01N6/CEB01N6
CEI01N6/CEF01N6
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
Forwand Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 0.4A
2
12
Min
650
1
10
-10
4
15
Typ
Max
Units
V
µA
µA
µA
6
V
Ω
g
FS
b
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
DS
= 20V, I
D
= 0.4A
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
0.5
136
46
19
19
38
26
48
70
8
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.8
A
V
V
DD
= 300V, I
D
= 0.4A,
V
GS
= 10V, R
GEN
= 4.7Ω
13
24
35
6
1.0
4.4
V
DS
= 480V, I
D
= 0.8A,
V
GS
= 10V
Drain-Source Diode Characteristics and Maximun Ratings
V
GS
= 0V, I
S
= 0.8A
1.6
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L = 190mH, I
AS
= 0.8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
2
CET [ CHINO-EXCEL TECHNOLOGY ]
