CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N6A
CEB02N6A
CEI02N6A
CEF02N6A
V
DSS
650V
650V
650V
650V
R
DS(ON)
7.5Ω
7.5Ω
7.5Ω
7.5Ω
I
D
1.5A
1.5A
1.5A
1.5A
e
@V
GS
10V
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
V
DS
V
GS
I
D
I
DM
f
P
D
E
AS
I
AS
T
J
,T
stg
1.5
4.5
42
0.33
90
1.4
650
TO-220F
Units
V
V
±
30
1.5
28
0.22
90
1.4
-55 to 150
e
A
A
W
W/ C
mJ
A
C
4.5
e
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
3
62.5
Limit
4.5
65
Units
C/W
C/W
2003.December
4-6
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
