CEP02N6/CEB02N6
CEI02N6/CEF02N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N6
CEB02N6
CEI02N6
CEF02N6
V
DSS
600V
600V
600V
600V
R
DS(ON)
5Ω
5Ω
5Ω
5Ω
I
D
2A
2A
2A
2A
e
@V
GS
10V
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
G
D
S
CEI SERIES
TO-262(I2-PAK)
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Repetitive Avalanche Current
a
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
V
DS
V
GS
I
D
I
DM
f
P
D
E
AS
I
AR
E
AR
T
J
,T
stg
2
6
60
0.48
125
2
5.4
600
TO-220F
Units
V
V
±
30
2
e
A
A
W
W/ C
mJ
A
mJ
C
6
e
29
0.23
125
2
5.4
-55 to 150
Repetitive Avalanche Energy
a
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
2.1
62.5
Limit
4.3
65
Units
C/W
C/W
2002.September
4-2
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
