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CEP02N7G 参数 Datasheet PDF下载

CEP02N7G图片预览
型号: CEP02N7G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 403 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N7G
CEB02N7G
CEF02N7G
V
DSS
700V
700V
700V
R
DS(ON)
6.75Ω
6.75Ω
6.75Ω
I
D
2A
2A
2A
d
CEP02N7G/CEB02N7G
CEF02N7G
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
G
G
D
S
G
CEP SERIES
TO-220
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
@ T
C
= 100 C
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
e
TO-220F
Units
V
V
700
±
30
2
1.3
8
60
0.48
11.25
1.5
-55 to 150
2
8
d
A
A
A
W
W/ C
mJ
A
C
1.3
d
d
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
h
33
0.26
Single Pulsed Avalanche Current
h
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
2.1
62.5
Limit
3.9
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2011.Jan
http://www.cetsemi.com