CEP04N7/CEB04N7
CEI04N7/CEF04N7
6
V
GS
=10,9,8,7V
5
4
3
2
1
0
0
5
10
15
20
25
30
10
1
I
D
, Drain Current (A)
V
GS
=6V
I
D
, Drain Current (A)
T
J
=150 C
10
0
V
GS
=5V
10
-1
25 C
2
4
-55 C
6
1.V
DS
=40V
2.Pulse Test
8
10
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
600
450
300
150
0
0
5
10
15
20
25
Coss
Crss
Ciss
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
I
D
=2A
V
GS
=10V
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
1
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=250µA
I
S
, Source-drain current (A)
10
V
GS
=0V
10
0
10
-25
0
25
50
75
100
125
150
-1
0.4
0.6
0.8
1.0
1.2
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 20
CET [ CHINO-EXCEL TECHNOLOGY ]
