CEP09N6/CEB09N6
CEI09N6/CEF09N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP09N6
CEB09N6
CEI09N6
CEF09N6
V
DSS
600V
600V
600V
600V
R
DS(ON)
1.2Ω
1.2Ω
1.2Ω
1.2Ω
I
D
9A
9A
9A
9A
e
@V
GS
10V
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
V
DS
V
GS
I
D
I
DM
f
P
D
E
AS
I
AS
T
J
,T
stg
9
35
156
1.25
500
9
600
TO-220F
Units
V
V
±
30
9
e
A
A
W
W/ C
mJ
A
C
35
e
50
0.38
500
9
-55 to 150
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
0.8
62.5
Limit
2.6
65
Units
C/W
C/W
2002.July
4 - 34
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CET [ CHINO-EXCEL TECHNOLOGY ]
