N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP12N6
CEB12N6
CEF12N6
V
DSS
600V
600V
600V
R
DS(ON)
0.65Ω
0.65Ω
0.65Ω
I
D
12A
12A
12A
d
CEP12N6/CEB12N6
CEF12N6
PRELIMINARY
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
G
G
D
S
G
CEP SERIES
TO-220
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
V
DS
V
GS
I
D
I
DM
e
P
D
T
J
,T
stg
12
48
250
1.67
600
TO-220F
Units
V
V
±
30
12
60
0.4
d
A
A
W
W/ C
C
48
d
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
0.6
62.5
Limit
2.5
65
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2008.Mar.
http://www.cetsemi.com