CEP13N10L/CEB13N10L
15
V
GS
=10,..6,5,4V
16
25 C
I
D
, Drain Current (A)
12
9
6
3
0
I
D
, Drain Current (A)
12
8
V
GS
=3.0V
4
T
J
=125 C
-55 C
2.0
3.0
4.0
5.0
0
1
2
3
4
5
0
0.0
1.0
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500
400
300
200
100
0
Coss
Crss
0
5
10
15
20
25
Ciss
2.6
2.2
1.8
1.4
1.0
0.6
0.2
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=6A
V
GS
=10V
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
I
S
, Source-drain current (A)
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.2
0.6
1.0
1.4
1.8
2.2
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
