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CEP3205 参数 Datasheet PDF下载

CEP3205图片预览
型号: CEP3205
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 417 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
55V, 108.5A, R
DS(ON)
= 8.5mΩ @V
GS
= 10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
CEP3205/CEB3205
D
D
G
G
D
S
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
Limit
55
Units
V
V
A
A
W
W/ C
mJ
A
C
±
20
108.5
434
200
1.3
319
68
-55 to 175
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
0.75
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2007.Sep.
http://www.cetsemi.com