CEP35P03/CEB35P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -35A, R
DS(ON)
=36mΩ @V
GS
= -10V.
R
DS(ON)
=57mΩ @V
GS
= -5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
-30
Units
V
V
A
A
W
W/ C
C
±
20
-35
-140
71
0.48
-55 to 175
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
2.1
62.5
Units
C/W
C/W
Rev 2. 2005.May
1
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CET [ CHINO-EXCEL TECHNOLOGY ]
