N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 72A, R
DS(ON)
= 13mΩ @V
GS
= 10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
CEP75N10/CEB75N10
PRELIMINARY
D
D
G
G
D
S
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
Drain Current-Continuous @ T
C
= 100 C
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
Limit
100
Units
V
V
A
A
A
W
W/ C
mJ
A
C
±
20
72
51
250
100
0.66
152
40
-55 to 175
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
1.5
62.5
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2010.May
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
