CEP76139/CEB76139
120
V
GS
=10,9,8,7,6,5,4V
100
80
60
40
20
60
50
40
30
25 C
20
10
T
J
=125C
-55 C
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
3.5
I
D
, Drain Current (A)
V
GS
=3V
V
GS
=2V
0
0.0
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
4200
3500
2800
2100
1400
700
Crss
0
0
5
10
15
20
25
Coss
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
I
D
=40A
V
GS
=10V
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
GS
=0V
2
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=250µA
I
S
, Source-drain current (A)
10
10
1
10
-25
0
25
50
75
100
125
150
0
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 168
CET [ CHINO-EXCEL TECHNOLOGY ]
